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| PHE 102 Spectroscopic Ellipsometer |
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Angstrom Advanced sets the standard in Ellipsometry-bringing the best in ellipsometry technology at the most affordable prices.Angstrom Advanced offers full range of ellipsometers for thin film thickness measurements, optical characterization for refractive index and extinction coefficient analysis (n & k). Our ellipsometers can be used for many different applications and are used in some of the most prestigious laboratories such as MIT, NASA, UC Berkeley, Yale University, Duke University, NIST and many more.
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| Features |
- Quick measurement in the UV/VIS/NIR range of 250 - 1100 nm with diode array detector or motor spectrometer (monochromator)
- Optional extension of the spectral range into the NIR (700 - 1700 nm) or (700 - 2100 nm)
- Optional extension of the UV-VIS range (190 - 1100 nm)
- Rotating polarizer provides accurate measurement of any polarization state
- Step scan analyzer for high speed and low noise aquisition
- Variable angle from 10-90° automated angle from 10-90° is also available
- Fast determination of thickness and refractive index of single or multi-layer samples
- Broad range Psi and Delta data are measured automatically and fitted through the PHE-102 software
- PHE-102 software is the most comprehensive program available for data acquisition and analysis. It combines state-of-the-art mathematical fitting algorithms with a large selection of modeling options for fast and accurate data analysis. An advanced spectroscopic ellipsometry software
- Built in library of material properties, includes several hundreds material models
- Mixture of new materials using known material properties
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| Introduction |
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The PHE-102 series is a variable angle spectroscopic ellipsometer operating in the spectral range 250 - 1100nm, 250-1700nm or 250-2100nm. In the PHE-102 ellipsometer a broad band white light source is used to illuminate the sample spot. The layer stack imparts a change in state of polarization to the light and is reflected back through the analyzer and into the detector; where it is measured under the ellipsometric parameters of Psi and Delta. The spectral dependence of the refractive index, dielectric constants of the materials and other parameters under measurement are determined by comparing the measured data to a theoretical model, which defines the layer structure in detail.
Two technical concepts are available for the PHE-102 spectroscopic ellipsometer. The first concept uses a photo-diode array(or CCD) as a detector. In this case, the measurement in the UV/VIS NIR region is based on the Step Scan Analyzer principle.In this principle there are no moving parts and a multiple fast diode array detection is used. The reflected light is analyzed at discrete analyzer positions with an optical multichannel analyzer, which consists of a grating and high performance photo-diode array detector providing high spectral resolution. This concept allows rapid analysis. The second concept uses instead of the photo-diode array a monochromator for wavelength selection. This concept is not as quick however it performs with better precision.
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| Software |
| Our user friendly PHE Spectroscopic Ellipsometry software allows the user to measure and analyze multiple material layers and complex thin film structures with mixed layers, interface layers and various other qualities. The state-of-art software has several hundreds materials models. The PHE-102 includes all the hardware and software needed for acquiring and analyzing all sample data. |
| Materials Library |
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The PHE spectroscopic ellipsometry software has a model and film library with predetermined measurement parameters, which allow the operator to select an application and quickly execute a measurement. The library includes several hundreds different models.
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| Specifications |
| Speed |
Typical measurement including data analysis 1 ~ 2.0 minutes |
| Thickness range of transparent films measurement |
0 - 30000 nm |
| Thickness range of absorptive films measurement |
0 - 30000 nm |
| Refractive index |
± 0.0001 |
| Thickness accuracy |
± 0.01nm |
| Range of angle of incidence |
10 - 90°, automated angle with 10-90 ° available |
| Reflection angle steps |
5° ± 0.01° |
| Spot size |
Ellipse ~ 1 mm × 3mm |
| Stability |
Long term ( months ) ± 0.01° in D |
| Measurement time |
1 s ~ 2.0 minutes |
| Sample stage |
Wafer chuck up to 200mm diameter |
| Sample stage adjustments |
Tilt and height |
| Sample alignment |
automated |
| Standard wavelength |
250-1100nm, 250-1700nm, 250-2100nm |
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