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| PHE101 Discrete Wavelength Ellipsometer |
Angstrom Advanced sets the standard in Ellipsometry-bringing the best in ellipsometry technology at the most affordable prices.Angstrom Advanced offers full range of ellipsometers for thin film thickness measurements, optical characterization for refractive index and extinction coefficient analysis (n & k). Angstrom Advanced Inc ellipsometry can be used for many different applications and are used in some of the most prestigious laboratories such as MIT, NASA, UC Berkeley, Yale University, Duke University, NIST and many more.
The PHE101 is the latest discrete wavelength ellipsometer with many new features, such as material library, wide variable angle, a second laser for alignment and a powerful software making the PHE101 Ellipsometer with high accuracy and repetition.
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| Features |
- Excellent accuracy and repetition
- Fast rotating analyzer operation.
- Powerful software with material library
- Widest variable angle 10-90°
- Auto focus compensates for sample topography and wafer 'bow' misalignment
- High stability and reproducibility of measured angle better than 0.01°
- Measurement speed is less than 1 sec
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| Introduction |
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PHE101 ellipsometer is an ideal discrete wavelength ellipsometer designed for measuring the refractive index, extinction coefficient(n & k) and thickness of single and multi-layer films. The PHE101 ellipsometer takes quick and accurate readings due to its precision optical analyzer/detector and its stable mechanical design. The PHE101 ellipsometer is supplied complete with an integrated Windows software package, which further enhances the speed and ease of operating the instrument.
PHE101 has the widest variable angle (10-90°) which is adjustable in steps of 5°, with an accuracy of 0.01°. (As an option, the angle of incidence can be varied continuously.)
The standard wavelength of PHE101 ellipsometer is HeNe laser at 632.8nm. However, The wavelength can be selected from 543nm, 594nm, 612nm, 633nm to 1150nm etc. Infrared sources at 0.83, 1.31 and 1.52 mm are also available.
The PHE101 is very easy to use and can be fitted with our new laser alignment tool which greatly improves the ease of use and speed of operation when compared to conventional ellipsometers.
The PHE101 has a large sample stage and measurement speed is less than 1 sec.
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| Spot Size |
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Ellipsometric measurements can be carried out on sample areas smaller than 50 mm × 50 mm as an option. Sample areas with small lateral dimensions can be analyzed using the micro spot option together with a mapping option.
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| Alignment |
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A laser is used for the alignment. It is more advanced than traditional quadrant coordinate method. It makes the alignment more convenient and accurate, since the operation's error is eliminated by the automatic correction.
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| Software |
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The PHE101 ellipsometer has a powerful software, acquisition and data interpretation, full material library, complete relations for new materials and bounded model algorithms for simultaneous analysis of multiple models. The software package calculates n, k, and thickness for substrates, single film and multi-layers. The user can store models and simulation curves that are used for calculation. Data can be imported from the ellipsometer, the keyboard or an external file.
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| Materials Library |
| The PHE101 ellipsometry software is prepared for materials library with predetermined measurement parameters allowing the operator to select an application and quickly execute a measurement. The full material library has hundreds of materials information, such as semiconductor, dielectric, metal and other materials. |
| Specifications |
| Thickness range of transparent films |
0 - 6000 nm |
| Thickness range of absorptive films |
0 - 6000 nm |
| Range of angle of incidence |
10 - 90° |
| Reflection angle steps |
5° ± 0.01° |
| Accuracy of refractive index measurement |
0.0001 |
| Accuracy of film thickness measurement |
± 0.001 nm for SiO2 standard sample |
| Stability |
Long term ( months ) ± 0.01° in D |
| Measurement time |
less than 1 sec |
| Sample stage |
Wafer chuck up to 200 mm diameter |
| Sample stage adjustments |
Tilt and height |
| Sample alignment |
Second laser alignment with automatic correction unit |
| Standard wavelength |
632.8 nm |
| Optional wavelength |
543 nm, 594 nm, 612 nm, 633 nm and 1150 nm or by request |
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